The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 31, 2015

Filed:

Dec. 09, 2010
Applicants:

Joonyoung Choi, Kyoung-ki-do, KR;

Yonghee Kang, Kyoung-gi-Do, KR;

Inventors:

JoonYoung Choi, Kyoung-ki-do, KR;

YongHee Kang, Kyoung-gi-Do, KR;

Assignee:

STATS ChipPAC, Ltd., Singapore, SG;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 25/16 (2006.01); H01L 25/065 (2006.01); H01L 25/10 (2006.01); H01L 23/13 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 21/683 (2006.01); H01L 23/14 (2006.01); H01L 23/498 (2006.01); H01L 21/48 (2006.01);
U.S. Cl.
CPC ...
H01L 25/16 (2013.01); H01L 25/0655 (2013.01); H01L 25/105 (2013.01); H01L 23/13 (2013.01); H01L 24/97 (2013.01); H01L 2224/0558 (2013.01); H01L 23/3128 (2013.01); H01L 24/16 (2013.01); H01L 21/6835 (2013.01); H01L 24/81 (2013.01); H01L 2221/68345 (2013.01); H01L 2224/05573 (2013.01); H01L 2224/05611 (2013.01); H01L 2224/05624 (2013.01); H01L 2224/05639 (2013.01); H01L 2224/05644 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/05655 (2013.01); H01L 2224/81132 (2013.01); H01L 2224/81191 (2013.01); H01L 2225/1058 (2013.01); H01L 2224/16237 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/73253 (2013.01); H01L 2924/00013 (2013.01); H01L 23/147 (2013.01); H01L 23/49827 (2013.01); H01L 21/486 (2013.01); H01L 2924/15156 (2013.01); H01L 2924/15311 (2013.01); H01L 2924/15331 (2013.01); H01L 2924/157 (2013.01); H01L 2924/18161 (2013.01); H01L 2924/19107 (2013.01); H01L 2225/1029 (2013.01); H01L 2225/1052 (2013.01); H01L 2924/13091 (2013.01); H01L 2225/1047 (2013.01); H01L 2924/01322 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/73265 (2013.01); H01L 2224/97 (2013.01);
Abstract

A semiconductor device has a substrate with a first and second recess formed in a surface of the substrate using a wet etch process. The second recess can have a size different from a size of the first recess. A plurality of conductive vias are formed in a surface of the first and second recesses using a dry etch process. A first conductive layer is formed over the surface of the substrate, over curved side walls of the first and second recesses, and electrically connected to the plurality of conductive vias. A first and second semiconductor die are mounted into the first and second recesses respectively. The second semiconductor die can have a size different from a size of the first semiconductor die. The first and second semiconductor die are electrically connected to the first conductive layer. An interconnect structure is electrically connected to the plurality of conductive vias.


Find Patent Forward Citations

Loading…