The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 31, 2015

Filed:

Feb. 28, 2012
Applicants:

Manfred Schneegans, Vaterstetten, DE;

Carsten Ahrens, Pettendorf, DE;

Adolf Koller, Regensburg, DE;

Gerald Lackner, Arnoldstein, AT;

Anton Mauder, Kolbermoor, DE;

Hans-joachim Schulze, Taufkirchen, DE;

Inventors:

Manfred Schneegans, Vaterstetten, DE;

Carsten Ahrens, Pettendorf, DE;

Adolf Koller, Regensburg, DE;

Gerald Lackner, Arnoldstein, AT;

Anton Mauder, Kolbermoor, DE;

Hans-Joachim Schulze, Taufkirchen, DE;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/36 (2006.01); H01L 21/02 (2006.01); H01L 21/762 (2006.01); H01L 29/861 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02658 (2013.01); H01L 21/76202 (2013.01); H01L 21/76224 (2013.01); H01L 29/8611 (2013.01);
Abstract

Exemplary embodiments of a method for producing a semiconductor component having a polycrystalline semiconductor body region are disclosed, wherein the polycrystalline semiconductor body region is produced between the first and second surfaces of the semiconductor body in a semiconductor component section, wherein an electromagnetic radiation having a wavelength of at least 1064 nm is introduced into the semiconductor body in a manner focused onto a position in the semiconductor component section of the semiconductor body and wherein the power density of the radiation at the position is less than 1×10W/cm.


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