The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 2015
Filed:
Feb. 07, 2012
Ying-tsung Chen, Kaohsiung, TW;
Chien-ting Lin, Hsinchu, TW;
Ssu-i Fu, Kaohsiung, TW;
Shih-hung Tsai, Tainan, TW;
Wen-tai Chiang, Tainan, TW;
Chih-wei Chen, Taichung, TW;
Chiu-hsien Yeh, Tainan, TW;
Shao-wei Wang, Taichung, TW;
Kai-ping Wang, Tainan, TW;
Ying-Tsung Chen, Kaohsiung, TW;
Chien-Ting Lin, Hsinchu, TW;
Ssu-I Fu, Kaohsiung, TW;
Shih-Hung Tsai, Tainan, TW;
Wen-Tai Chiang, Tainan, TW;
Chih-Wei Chen, Taichung, TW;
Chiu-Hsien Yeh, Tainan, TW;
Shao-Wei Wang, Taichung, TW;
Kai-Ping Wang, Tainan, TW;
United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
A semiconductor process includes the following steps. A substrate is provided. An ozone saturated deionized water process is performed to form an oxide layer on the substrate. A dielectric layer is formed on the oxide layer. A post dielectric annealing (PDA) process is performed on the dielectric layer and the oxide layer.