The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 2015
Filed:
Aug. 20, 2013
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Inventors:
Ming-Feng Shieh, Yongkang, TW;
Ru-Gun Liu, Zhubei, TW;
Hung-Chang Hsieh, Hsin-Chu, TW;
Tsai-Sheng Gau, Hsin-Chu, TV;
Yao-Ching Ku, Hsinchu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/308 (2006.01); H01L 21/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3083 (2013.01); H01L 22/12 (2013.01); Y10S 438/942 (2013.01);
Abstract
The present disclosure provides one embodiment of a method for an integrated circuit (IC). The method includes forming a mandrel pattern on a substrate by a first lithography process; forming a first spacer pattern on sidewalls of the mandrel pattern; removing the mandrel pattern; forming a second spacer pattern on sidewalls of the first spacer pattern; removing the first spacer pattern; and etching the substrate using the second spacer pattern as an etch mask.