The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 17, 2015

Filed:

Oct. 08, 2013
Applicant:

Chipbond Technology Corporation, Hsinchu, TW;

Inventors:

Chin-Tang Hsieh, Kaohsiung, TW;

You-Ming Hsu, Kaohsiung, TW;

Ming-Sheng Liu, Hsinchu, TW;

Chih-Ping Wang, Hsinchu County, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 23/58 (2006.01); H01L 23/495 (2006.01); H01L 23/00 (2006.01); H01L 29/02 (2006.01);
U.S. Cl.
CPC ...
H01L 23/562 (2013.01); H01L 29/02 (2013.01);
Abstract

A semiconductor structure includes a carrier, a first protective layer, a second protective layer, and a third protective layer. A first surface of the first protective layer comprises a first anti-stress zone. The second protective layer reveals the first anti-stress zone and comprises a second surface, a first lateral side, a second lateral side and a first connection side. The second surface comprises a second anti-stress zone. An extension line of the first lateral side intersects with an extension line of the second lateral side to form a first intersection point. A zone formed by connecting the first intersection point and two points of the first connection side is the first anti-stress zone. The third protective layer reveals the second anti-stress zone and comprises a second connection side projected on the first surface to form a projection line parallel to the first connection side.


Find Patent Forward Citations

Loading…