The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 17, 2015
Filed:
Mar. 11, 2013
International Business Machines Corporation, Armonk, NY (US);
Alfred Grill, White Plains, NY (US);
Seth L. Knupp, Schenectady, NY (US);
Son V. Nguyen, Schenectady, NY (US);
Vamsi K. Paruchuri, Clifton Park, NY (US);
Deepika Priyadarshini, Guilderland, NY (US);
Hosadurga K. Shobha, Niskayuna, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Multilayer dielectric structures are provided having silicon nitride (SiN) and silicon oxynitride (SiNO) films for use as capping layers, liners, spacer barrier layers, and etch stop layers, and other components of semiconductor nano-devices. For example, a semiconductor structure includes a multilayer dielectric structure having multiple layers of dielectric material including one or more SiN layers and one or more SiNO layers. The layers of dielectric material in the multilayer dielectric structure have a thickness in a range of about 0.5 nanometers to about 3 nanometers.