The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 10, 2015
Filed:
Apr. 19, 2013
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Tai-I Yang, Hsinchu, TW;
Hong-Seng Shue, Zhubei, TW;
Kun-Ming Huang, Taipei, TW;
Tzu-Cheng Chen, Taipei, TW;
Ming-Che Yang, Hsinchu, TW;
Po-Tao Chu, New Taipei, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
A method for forming a semiconductor device includes forming a hard mask layer over a substrate comprising a semiconductor material of a first conductivity type, and forming a plurality of trenches in the hard mask layer and extending into the substrate. Each trench has at least one side wall and a bottom wall. The method further includes forming at least one barrier insulator layer along the at least one side wall and over the bottom wall of each trench, removing the at least one barrier insulator layer over the bottom wall of each trench, and filling the plurality of trenches with a semiconductor material of a second conductivity type.