The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 03, 2015

Filed:

Feb. 10, 2009
Applicants:

Caizhong Tian, Hyogo, JP;

Kiyotaka Ishibashi, Hyogo, JP;

Toshihisa Nozawa, Hyogo, JP;

Inventors:

Caizhong Tian, Hyogo, JP;

Kiyotaka Ishibashi, Hyogo, JP;

Toshihisa Nozawa, Hyogo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/00 (2006.01); C23F 1/00 (2006.01); H01L 21/306 (2006.01); H05H 1/46 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H05H 1/46 (2013.01); H01J 37/32192 (2013.01); H01J 37/32211 (2013.01); H01J 37/3222 (2013.01); H01J 37/32238 (2013.01);
Abstract

A plasma generation chamber of a plasma processing apparatus is closed by a top plate. The top platehas recessesA on its surface facing the plasma generation chamber and a central recessB on an opposite surface. The top plateis coupled to an antenna thereon. If a microwave is supplied to the antenna, the microwave is radiated through slots of the antenna. The microwave is propagated through the top platesuch that the microwave has a plane of polarization and the microwave forms a circularly polarized wave as a whole. Here, resonance absorption of the microwave occurs at a side surface of recessesA and the microwave is propagated within the recessesA in a single mode. Strong plasma can be generated within each of the recessesA, so that a stable plasma mode can be generated in the top plate


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