The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 24, 2015
Filed:
Apr. 26, 2012
Applicants:
Manjunatha Govinda Prabhu, Singapore, SG;
Mahadeva Iyer Natarajan, Clifton Park, NY (US);
Da-wei Lai, Singapore, SG;
Ryan Shan, Singapore, SG;
Inventors:
Manjunatha Govinda Prabhu, Singapore, SG;
Mahadeva Iyer Natarajan, Clifton Park, NY (US);
Da-Wei Lai, Singapore, SG;
Ryan Shan, Singapore, SG;
Assignee:
GLOBALFOUNDRIES Singapore Pte. Ltd., Singapore, SG;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H02H 9/04 (2006.01); H02H 3/20 (2006.01);
U.S. Cl.
CPC ...
Abstract
Protecting a gate dielectric is achieved with a gate dielectric protection circuit coupled to a transistor at risk. The protection circuit is activated to reduce the voltage across the gate dielectric (V) to below its breakdown voltage (V). The protection circuit is activated when an ESD event is detected. The protection circuit provides a protection or ESD bias to reduce Vbelow V.