The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 24, 2015

Filed:

Dec. 16, 2011
Applicants:

Chia Ying Lee, New Taipei, TW;

Chih-yuan Ting, Taipei, TW;

Jyu-horng Shieh, Hsin-Chu, TW;

Minghsing Tsai, Chu-Pei, TW;

Syun-ming Jang, Hsin-Chu, TW;

Inventors:

Chia Ying Lee, New Taipei, TW;

Chih-Yuan Ting, Taipei, TW;

Jyu-Horng Shieh, Hsin-Chu, TW;

Minghsing Tsai, Chu-Pei, TW;

Syun-Ming Jang, Hsin-Chu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/32 (2006.01); H01L 21/311 (2006.01); H01L 21/033 (2006.01); H01L 21/308 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31144 (2013.01); H01L 21/0337 (2013.01); H01L 21/3086 (2013.01); H01L 21/32 (2013.01);
Abstract

The present disclosure provides a method including providing a semiconductor substrate and forming a first layer and a second layer on the semiconductor substrate. The first layer is patterned to provide a first element, a second element, and a space interposing the first and second elements. Spacer elements are then formed on the sidewalls on the first and second elements of the first layer. Subsequently, the second layer is etched using the spacer elements and the first and second elements as a masking element.


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