The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 17, 2015
Filed:
Apr. 24, 2007
Stephen Yuen, Santa Clara, CA (US);
Kyeong-tae Lee, San Jose, CA (US);
Valentin Todorow, Palo Alto, CA (US);
Tae Won Kim, San Jose, CA (US);
Anisul Khan, Santa Clara, CA (US);
Shashank Deshmukh, San Ramon, CA (US);
Stephen Yuen, Santa Clara, CA (US);
Kyeong-Tae Lee, San Jose, CA (US);
Valentin Todorow, Palo Alto, CA (US);
Tae Won Kim, San Jose, CA (US);
Anisul Khan, Santa Clara, CA (US);
Shashank Deshmukh, San Ramon, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
An inductively-coupled plasma processing chamber has a chamber with a ceiling. A first and second antenna are placed adjacent to the ceiling. The first antenna is concentric to the second antenna. A plasma source power supply is coupled to the first and second antenna. The plasma source power supply generates a first RF power to the first antenna, and a second RF power to the second antenna. A substrate support disposed within the chamber. The size of the first antenna and a distance between the substrate support are such that the etch rate of the substrate on the substrate support is substantially uniform.