The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 10, 2015

Filed:

Oct. 03, 2013
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventors:

I-Chang Shih, Zhubei, TW;

Yi-Jie Chen, Hsinchu, TW;

Chia-Cheng Chang, Zhubei, TW;

Feng-Yuan Chiu, Zhudong Township, TW;

Ying-Chou Cheng, Zhubei, TW;

Chiu Hsiu Chen, Zhubei, TW;

Bing-Syun Yeh, Hsinchu, TW;

Ru-Gun Liu, Zhubei, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01N 23/00 (2006.01); G21K 7/00 (2006.01); G01B 15/04 (2006.01);
U.S. Cl.
CPC ...
G01B 15/04 (2013.01);
Abstract

A method for characterizing a three-dimensional surface profile of a semiconductor workpiece is provided. In this method, the three-dimensional surface profile is imaged from a normal angle to measure widths of various surfaces in a first image. The three-dimensional surface is also imaged from a first oblique angle to re-measure the widths of the various surfaces in a second image. Based on differences in widths of corresponding surfaces for first and second images, a feature height and sidewall angle are determined for the three-dimensional profile.


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