The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 10, 2015
Filed:
Mar. 13, 2013
Taiwan Semiconductor Manufacturing Company Limited, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company Limited, Hsin-Chu, TW;
Abstract
One or more integrated circuit structures and techniques for forming such integrated circuit structures are provided. The integrated circuit structures comprise a conductive structure that is formed within a trench in a dielectric layer on a substrate. The conductive structure is formed over a barrier layer formed within the trench, or the conductive structure is formed over a liner formed over the barrier layer. At least some of the dielectric layer, the barrier layer, the liner and the conductive structure are removed, for example, by chemical mechanical polishing, such that a step height exists between a top surface of the substrate and a top surface of the dielectric layer. Removing these layers in this manner removes areas where undesired interlayer peeling is likely to occur. A conductive cap is formed on the conductive structure.