The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 27, 2015
Filed:
Jun. 13, 2011
Applicants:
Shannon W. Dunn, Altamont, NY (US);
Dave Hetzer, Schenectady, NY (US);
Inventors:
Shannon W. Dunn, Altamont, NY (US);
Dave Hetzer, Schenectady, NY (US);
Assignee:
Tokyo Electron Limited, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/033 (2006.01); H01L 21/027 (2006.01); G03F 7/00 (2006.01); G03F 7/40 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0337 (2013.01); H01L 21/0274 (2013.01); G03F 7/0035 (2013.01); G03F 7/40 (2013.01); G03F 7/405 (2013.01); Y10S 438/947 (2013.01); Y10S 438/948 (2013.01);
Abstract
A method for double patterning a substrate is described. The double patterning method may include a litho/freeze/litho/etch (LFLE) technique that includes a first (critical dimension) CD slimming process to reduce the first CD to a first reduced CD and a second CD slimming process to reduce the second CD to a second reduced CD.
Dunn, Shannon. (2015). Double patterning with inline critical dimension slimming (U.S. Patent No. 8940475). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8940475
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile