The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 20, 2015
Filed:
Aug. 14, 2013
International Business Machines Corporation, Armonk, NY (US);
Anirban Basu, Elmsford, NY (US);
Cheng-Wei Cheng, White Plains, NY (US);
Amlan Majumdar, White Plains, NY (US);
Ryan M. Martin, New York, NY (US);
Uzma Rana, Chappaqua, NY (US);
Devendra K. Sadana, Pleasantville, NY (US);
Kuen-Ting Shiu, White Plains, NY (US);
Yanning Sun, Scarsdale, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method for forming fin field effect transistors includes forming a dielectric layer on a silicon substrate, forming high aspect ratio trenches in the dielectric layer down to the substrate, the high aspect ratio including a height to width ratio of greater than about 1:1 and epitaxially growing a non-silicon containing semiconductor material in the trenches using an aspect ratio trapping process to form fins. The one or more dielectric layers are etched to expose a portion of the fins. A barrier layer is epitaxially grown on the portion of the fins, and a gate stack is formed over the fins. A spacer is formed around the portion of the fins and the gate stack. Dopants are implanted into the portion of the fins. Source and drain regions are grown over the fins using a non-silicon containing semiconductor material.