The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8937004 B1

PDF
Full Text
Expired
Date of Patent:
Jan. 20, 2015

Filed:

Apr. 19, 2013
Applicant:

Varian Semiconductor Equipment Associates, Inc., Gloucester, MA (US);

Inventors:

Anthony Renau, West Newbury, MA (US);

Ludovic Godet, Boston, MA (US);

Timothy J. Miller, Ipswich, MA (US);

Joseph C. Olson, Beverly, MA (US);

Vikram Singh, North Andover, MA (US);

James Buonodono, Amesbury, MA (US);

Deepak A. Ramappa, Somerville, MA (US);

Russell J. Low, Dellwood, MN (US);

Atul Gupta, Beverly, MA (US);

Kevin M. Daniels, Lynnfield, MA (US);

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/26 (2006.01); H01L 21/42 (2006.01); B01J 19/08 (2006.01); H01J 37/317 (2006.01); H01J 37/32 (2006.01); H01L 31/0224 (2006.01); H01L 31/068 (2012.01); H01L 21/223 (2006.01);
U.S. Cl.
CPC ...
B01J 19/081 (2013.01); H01J 37/3171 (2013.01); H01J 37/32357 (2013.01); H01J 37/32422 (2013.01); H01J 37/32623 (2013.01); H01L 31/022425 (2013.01); H01L 31/068 (2013.01); H01L 31/0804 (2013.01); H01J 2237/0453 (2013.01); H01J 2237/1205 (2013.01); H01L 21/2236 (2013.01); Y02E 10/547 (2013.01);
Abstract

A plasma processing apparatus comprises a plasma source configured to produce a plasma in a plasma chamber, such that the plasma contains ions for implantation into a workpiece. The apparatus also includes a focusing plate arrangement having an aperture arrangement configured to modify a shape of a plasma sheath of the plasma proximate the focusing plate such that ions exiting an aperture of the aperture arrangement define focused ions. The apparatus further includes a processing chamber containing a workpiece spaced from the focusing plate such that a stationary implant region of the focused ions at the workpiece is substantially narrower that the aperture. The apparatus is configured to create a plurality of patterned areas in the workpiece by scanning the workpiece during ion implantation.


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Renau, Anthony. (2015). Apparatus and method for controllably implanting workpieces (U.S. Patent No. 8937004). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8937004

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