The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 2015
Filed:
Feb. 13, 2013
Samsung Electronics Co., Ltd., Suwon-si, KR;
Ho-Jin Lee, Seoul, KR;
Pil-Kyu Kang, Anyang-si, KR;
Kyu-Ha Lee, Yongin-si, KR;
Gilheyun Choi, Seoul, KR;
YongSoon Choi, Yongin-si, KR;
Byung Lyul Park, Seoul, KR;
Hyunsoo Chung, Hwaseong-si, KR;
Abstract
Semiconductor devices having through-vias and methods for fabricating the same are described. The method may include forming a hole opened toward a top surface of a substrate and partially penetrating the substrate, forming a sacrificial layer partially filling the hole, forming a through-via in the hole partially filled with the sacrificial layer, forming a via-insulating layer between the through-via and the substrate, and exposing the through-via through a bottom surface of the substrate. Forming the sacrificial layer may include forming an insulating flowable layer on the substrate, and constricting the insulating flowable layer to form a solidified flowable layer.