The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 2015
Filed:
Oct. 22, 2013
Applicant:
Jsr Corporation, Tokyo, JP;
Inventors:
Assignee:
JSR Corporation, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/26 (2006.01); G03F 7/20 (2006.01); H01L 21/027 (2006.01);
U.S. Cl.
CPC ...
G03F 7/2022 (2013.01); H01L 21/0274 (2013.01);
Abstract
A double patterning method includes providing a first resist film on a substrate using a first photoresist composition. The first resist film is exposed. The exposed first resist film is developed using a first developer to form a first resist pattern. A second resist film is provided in at least space areas of the first resist pattern using a second photoresist composition. The second resist film is exposed. The exposed second resist film is developed using a second developer that includes an organic solvent to form a second resist pattern. The first resist pattern is insoluble or scarcely soluble in the second developer.