The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 2014
Filed:
Aug. 20, 2012
Xia LI, San Diego, CA (US);
Kangho Lee, San Diego, CA (US);
Jung Pill Kim, San Diego, CA (US);
Taehyun Kim, San Diego, CA (US);
Wah Nam Hsu, San Diego, CA (US);
Seung H. Kang, San Diego, CA (US);
Xiaochun Zhu, San Diego, CA (US);
Wei-chuan Chen, Taipei, TW;
Sungryul Kim, San Diego, CA (US);
Xia Li, San Diego, CA (US);
Kangho Lee, San Diego, CA (US);
Jung Pill Kim, San Diego, CA (US);
Taehyun Kim, San Diego, CA (US);
Wah Nam Hsu, San Diego, CA (US);
Seung H. Kang, San Diego, CA (US);
Xiaochun Zhu, San Diego, CA (US);
Wei-Chuan Chen, Taipei, TW;
Sungryul Kim, San Diego, CA (US);
QUALCOMM Incorporated, San Diego, CA (US);
Abstract
Systems and methods for multiple-time programmable (MTP) devices. An MTP device includes a magnetic tunnel junction (MTJ) device programmable to a plurality of states based on voltage applied across the MTJ device. The plurality of states include a first resistance state corresponding to a first binary value stored in the MTJ device based on a first voltage, a second resistance state corresponding to a second binary value stored in the MTJ device based on a second voltage, a third resistance state corresponding to a breakdown of a barrier layer of the MTJ device based on a third voltage, and a fourth resistance state corresponding to an open fuse based on a fourth voltage.