The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 2014
Filed:
Oct. 31, 2013
Applicant:
Internatinoal Business Machines Corporation, Armonk, NY (US);
Inventors:
Mukta G. Farooq, Hopewell Junction, NY (US);
Emily R. Kinser, Poughkeepsie, NY (US);
Ian D. Melville, Highland, NY (US);
Krystyna W. Semkow, Poughquag, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/52 (2006.01); H01L 29/40 (2006.01); H01L 23/532 (2006.01); H01L 21/02 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02697 (2013.01); H01L 2224/05572 (2013.01); H01L 2924/01078 (2013.01); H01L 2224/05007 (2013.01); H01L 2224/05006 (2013.01); H01L 2224/03452 (2013.01); H01L 2224/05147 (2013.01); H01L 2224/0401 (2013.01); H01L 2924/01033 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/01074 (2013.01); H01L 23/53238 (2013.01); H01L 2224/05562 (2013.01); H01L 24/13 (2013.01); H01L 2224/05026 (2013.01); H01L 2224/05027 (2013.01); H01L 2924/014 (2013.01); H01L 2224/05157 (2013.01); H01L 2924/01013 (2013.01); H01L 2224/131 (2013.01); H01L 2224/05016 (2013.01); H01L 2924/01023 (2013.01); H01L 2224/05124 (2013.01); H01L 2224/0345 (2013.01); H01L 2924/01073 (2013.01); H01L 2224/05187 (2013.01); H01L 2924/01327 (2013.01); H01L 24/05 (2013.01); H01L 2924/04941 (2013.01); H01L 2924/01032 (2013.01); H01L 24/03 (2013.01);
Abstract
Disclosed is a semiconductor device wherein an insulation layer has a via opening with an aluminum layer in the via opening and in contact with the last wiring layer of the device. There is a barrier layer on the aluminum layer followed by a copper plug which fills the via opening. Also disclosed is a process for making the semiconductor device.