The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 16, 2014
Filed:
Sep. 07, 2012
Sangjun Cho, Pleasanton, CA (US);
Tom Choi, Santa Clara, CA (US);
Taejoon Han, San Ramon, CA (US);
Sean Kang, San Ramon, CA (US);
Prabhakara Gopaladasu, Fremont, CA (US);
Bi-ming Yen, Fremont, CA (US);
Sangjun Cho, Pleasanton, CA (US);
Tom Choi, Santa Clara, CA (US);
Taejoon Han, San Ramon, CA (US);
Sean Kang, San Ramon, CA (US);
Prabhakara Gopaladasu, Fremont, CA (US);
Bi-Ming Yen, Fremont, CA (US);
Lam Research Corporation, Fremont, CA (US);
Abstract
A method for etching features in a silicon layer is provided. A hard mask layer is formed over the silicon layer. A photoresist layer is formed over the hard mask layer. The hard mask layer is opened. The photoresist layer is stripped by providing a stripping gas; forming a plasma with the stripping gas by providing a high frequency RF power and a low frequency RF power, wherein the low frequency RF power has a power less than 50 watts; and stopping the stripping gas when the photoresist layer is stripped. The opening the hard mask layer and the stripping the photoresist layer are performed in a same chamber.