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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8912610 B1

PDFFull Text
Date of Patent:
Dec. 16, 2014

Filed:

Apr. 03, 2012

Structure and method for mosfets with high-k and metal gate structure

Applicants:

Jr Jung Lin, Zhubei, TW;

Yun-ju Sun, Taipei, TW;

Shih-hsun Chang, Hsinchu, TW;

Chia-jen Chen, Chiayi, TW;

Tomonari Yamamoto, Jhubei, TW;

Chih-wei Kuo, Tainan, TW;

Meng-yi Sun, Hsinchu, TW;

Kuo-chiang Ting, Hsinchu, TW;

Inventors:

Jr Jung Lin, Zhubei, TW;

Yun-Ju Sun, Taipei, TW;

Shih-Hsun Chang, Hsinchu, TW;

Chia-Jen Chen, Chiayi, TW;

Tomonari Yamamoto, Jhubei, TW;

Chih-Wei Kuo, Tainan, TW;

Meng-Yi Sun, Hsinchu, TW;

Kuo-Chiang Ting, Hsinchu, TW;

Assignee:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Attorney:

Haynes and Boonem LLP

Primary Examiner:

Jae Lee

Assistant Examiner:

Junaiden Mirsalahuddin

Int. Cl.
CPC ...
H01L 21/70 (2006.01); H01L 21/02 (2006.01); H01L 29/66 (2006.01); H01L 21/311 (2006.01); H01L 29/423 (2006.01); H01L 21/3213 (2006.01); H01L 21/28 (2006.01); H01L 29/78 (2006.01); H01L 29/51 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0206 (2013.01); H01L 29/7848 (2013.01); H01L 29/6659 (2013.01); H01L 21/31116 (2013.01); H01L 29/513 (2013.01); H01L 21/31122 (2013.01); H01L 29/42376 (2013.01); H01L 21/02071 (2013.01); H01L 29/517 (2013.01); H01L 21/32136 (2013.01); H01L 21/28114 (2013.01); H01L 21/32137 (2013.01); H01L 21/28088 (2013.01); H01L 29/66545 (2013.01);
Abstract

The present disclosure provides a semiconductor structure. The semiconductor structure includes a semiconductor substrate; and a gate stack disposed on the semiconductor substrate. The gate stack includes a high k dielectric material layer, a capping layer disposed on the high k dielectric material layer, and a metal layer disposed on the capping layer. The capping layer and the high k dielectric material layer have a footing structure.

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