The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 16, 2014
Filed:
Jun. 15, 2012
Tieh-chiang Wu, Yilan County, TW;
Wei-ming Liao, Taoyuan County, TW;
Jei-cheng Huang, New Taipei, TW;
Shin-yu Nieh, Taipei, TW;
Tieh-Chiang Wu, Yilan County, TW;
Wei-Ming Liao, Taoyuan County, TW;
Jei-Cheng Huang, New Taipei, TW;
Shin-Yu Nieh, Taipei, TW;
Nanya Technology Corporation, Taoyuan, TW;
Abstract
A method of fabricating a semiconductor device is described. A substrate having first and second areas is provided. A first patterned mask layer having at least one first opening in the first area and at least one second opening in the second area is formed over the substrate, wherein the first opening is smaller than the second opening. A portion of the substrate is removed with the first patterned mask layer as a mask to form first and second trenches respectively in the substrate in the first and second areas, wherein the width and the depth of the first trench are less than those of the second trench. A first dielectric layer is formed at least in the first and second trenches. A conductive structure is formed on the first dielectric layer on at least a portion of the sidewall of each of the first and second trenches.