The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 09, 2014

Filed:

Feb. 21, 2012
Applicants:

Jang Fung Chen, Cupertino, CA (US);

Duan-fu Stephen Hsu, Fremont, CA (US);

Douglas Van Den Broeke, Sunnyvale, CA (US);

Inventors:

Jang Fung Chen, Cupertino, CA (US);

Duan-Fu Stephen Hsu, Fremont, CA (US);

Douglas Van Den Broeke, Sunnyvale, CA (US);

Assignee:

ASML Netherlands B.V., Veldhoven, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 17/50 (2006.01); G03F 7/20 (2006.01); G03F 1/00 (2012.01);
U.S. Cl.
CPC ...
G03F 1/144 (2013.01); G03F 7/70466 (2013.01);
Abstract

A method of generating complementary masks based on a target pattern having features to be imaged on a substrate for use in a multiple-exposure lithographic imaging process is disclosed. The method includes defining an initial H-mask and an initial V-mask corresponding to the target pattern; identifying horizontal critical features in the H-mask and vertical critical features in the V-mask; assigning a first phase shift and a first percentage transmission to the horizontal critical features, which are to be formed in the H-mask; and assigning a second phase shift and a second percentage transmission to the vertical critical features, which are to be formed in the V-mask. The method further includes the step of assigning chrome to all non-critical features in the H-mask and the V-mask.


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