The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 09, 2014

Filed:

Nov. 18, 2009
Applicants:

Franciscus Godefridus Casper Bijnen, Valkenswaard, NL;

Jozef Cornelis Antonius Roijers, Veldhoven, NL;

Patrick Warnaar, Tilburg, NL;

Marc Van Kemenade, Waalre, NL;

Hoite Pieter Theodoor Tolsma, Eindhoven, NL;

Inventors:
Assignee:

ASML Netherlands B.V., Veldhoven, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03B 27/32 (2006.01); G03F 9/00 (2006.01);
U.S. Cl.
CPC ...
G03F 9/7049 (2013.01); G03F 9/7003 (2013.01); G03F 9/7076 (2013.01); G03F 9/7084 (2013.01);
Abstract

A method for manufacturing a device includes providing a substrate, the substrate including a plurality of exposure fields, each exposure field including one or more target portions and at least one mark structure, the mark structure being arranged as positional mark for the exposure field; scanning and measuring the mark of each exposure field to obtain alignment information for the respective exposure field; determining an absolute position of each exposure field from the alignment information for the respective exposure field; determining a relative position of each exposure field with respect to at least one other exposure field by use of additional information on the relative parameters of the exposure field and the at least one other exposure field relative to each other; and combining the absolute positions and the determined relative positions into improved absolute positions for each of the plurality of exposure fields.


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