The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 02, 2014

Filed:

May. 21, 2012
Applicants:

Masayoshi Sagehashi, Jyoetsu, JP;

Youichi Ohsawa, Jyoetsu, JP;

Koji Hasegawa, Jyoetsu, JP;

Tomohiro Kobayashi, Jyoetsu, JP;

Inventors:

Masayoshi Sagehashi, Jyoetsu, JP;

Youichi Ohsawa, Jyoetsu, JP;

Koji Hasegawa, Jyoetsu, JP;

Tomohiro Kobayashi, Jyoetsu, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/004 (2006.01); G03F 7/30 (2006.01); C08F 220/38 (2006.01); C08F 24/00 (2006.01); G03F 7/20 (2006.01); G03F 7/039 (2006.01); G03F 7/11 (2006.01);
U.S. Cl.
CPC ...
G03F 7/2041 (2013.01); G03F 7/30 (2013.01); C08F 24/00 (2013.01); G03F 7/0045 (2013.01); G03F 7/0397 (2013.01); G03F 7/11 (2013.01); C08F 220/38 (2013.01); Y10S 430/111 (2013.01);
Abstract

There is disclosed a polymer having a repeating unit shown by the following general formula (1). There can be, in a photolithography using a high energy beam such as an ArF excimer laser beam and an EUV as a light source, (1) a polymer that gives a resist composition having an appropriate adhesion with a substrate and being capable of forming a pattern having excellent resolution, especially an excellent rectangular pattern profile, (2) a chemically amplified resist composition containing the said polymer, and (3) a patterning process using the said chemically amplified resist composition.


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