The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 25, 2014

Filed:

Apr. 25, 2013
Applicant:

Stats Chippac, Ltd., Singapore, SG;

Inventors:

SungWon Cho, Kyoung-gi-Do, KR;

KiYoun Jang, Kyoungiki-do, KR;

YongHee Kang, Kyoungki-do, KR;

Hyung Sang Park, Kyoung-gi-Do, KR;

Assignee:

STATS ChipPAC, Ltd., Singapore, SG;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 21/48 (2006.01); H01L 23/00 (2006.01); H01L 23/498 (2006.01); H01L 21/56 (2006.01);
U.S. Cl.
CPC ...
H01L 24/09 (2013.01); H01L 2924/01029 (2013.01); H01L 2224/13113 (2013.01); H01L 2224/11464 (2013.01); H01L 21/4857 (2013.01); H01L 2224/11903 (2013.01); H01L 24/16 (2013.01); H01L 2224/81193 (2013.01); H01L 2224/13083 (2013.01); H01L 2224/29144 (2013.01); H01L 2224/11849 (2013.01); H01L 2224/81385 (2013.01); H01L 2224/81444 (2013.01); H01L 2224/1145 (2013.01); H01L 2924/01322 (2013.01); H01L 2224/11452 (2013.01); H01L 2224/73204 (2013.01); H01L 2224/11462 (2013.01); H01L 2224/16238 (2013.01); H01L 2924/10329 (2013.01); H01L 2224/05655 (2013.01); H01L 2224/05647 (2013.01); H01L 24/48 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/2919 (2013.01); H01L 2924/10252 (2013.01); H01L 24/17 (2013.01); H01L 2224/13155 (2013.01); H01L 23/49827 (2013.01); H01L 2924/014 (2013.01); H01L 2224/13111 (2013.01); H01L 2924/01033 (2013.01); H01L 2924/01049 (2013.01); H01L 24/11 (2013.01); H01L 2924/01023 (2013.01); H01L 2224/81447 (2013.01); H01L 2224/05611 (2013.01); H01L 2224/13144 (2013.01); H01L 2224/13139 (2013.01); H01L 2224/13099 (2013.01); H01L 2224/11831 (2013.01); H01L 2224/81455 (2013.01); H01L 24/13 (2013.01); H01L 2224/48158 (2013.01); H01L 2224/1147 (2013.01); H01L 2224/8385 (2013.01); H01L 2924/15311 (2013.01); H01L 2224/05624 (2013.01); H01L 24/32 (2013.01); H01L 2924/13091 (2013.01); H01L 2224/1132 (2013.01); H01L 2924/10272 (2013.01); H01L 2224/73265 (2013.01); H01L 2224/16225 (2013.01); H01L 2224/81424 (2013.01); H01L 2224/11901 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/81801 (2013.01); H01L 2224/1155 (2013.01); H01L 2224/13124 (2013.01); H01L 24/14 (2013.01); H01L 2224/81011 (2013.01); H01L 2224/1403 (2013.01); H01L 2924/01079 (2013.01); H01L 2924/10253 (2013.01); H01L 2224/83102 (2013.01); H01L 2224/92125 (2013.01); H01L 2224/81022 (2013.01); H01L 2224/11334 (2013.01); H01L 2224/81411 (2013.01); H01L 23/49822 (2013.01); H01L 2224/13082 (2013.01); H01L 2924/10335 (2013.01); H01L 2224/48105 (2013.01); H01L 2924/01082 (2013.01); H01L 2224/05639 (2013.01); H01L 2224/81439 (2013.01); H01L 21/563 (2013.01); H01L 2224/48091 (2013.01); H01L 2924/01013 (2013.01); H01L 2224/16237 (2013.01); H01L 2224/05644 (2013.01); H01L 2224/13116 (2013.01); H01L 2924/01047 (2013.01); H01L 2924/3841 (2013.01); H01L 2224/04042 (2013.01); H01L 24/81 (2013.01);
Abstract

A semiconductor device has a first substrate and first conductive pillars formed over the first substrate. Second conductive pillars are formed over the first substrate alternating with the first conductive pillars. The second conductive pillars are vertically offset with respect to the first conductive pillars. First BOT interconnect sites are formed over a second substrate. Second BOT interconnect sites are formed over the second substrate alternating with the first interconnect sites. The second interconnect sites are vertically offset with respect to the first interconnect sites. The first substrate is mounted to the second substrate such that the first conductive pillars are aligned with and electrically connected to the first interconnect sites and the second conductive pillars are aligned with and electrically connected to the second interconnect sites. An underfill material is deposited between the first and second substrates. The first substrate can be a flipchip type semiconductor device.


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