The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 25, 2014

Filed:

Sep. 17, 2013
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Thomas N. Adam, Slingerlands, NY (US);

Veeraraghavan S. Basker, Schenectady, NY (US);

Jinghong Li, Poughquag, NY (US);

Chung-Hsun Lin, White Plains, NY (US);

Sebastian Naczas, Albany, NY (US);

Alexander Reznicek, Albany, NY (US);

Tenko Yamashita, Schenectady, NY (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7853 (2013.01); H01L 27/1211 (2013.01);
Abstract

A plurality of semiconductor fins are formed which extend from a semiconductor material portion that is present atop an insulator layer of a semiconductor-on-insulator substrate. A gate structure and adjacent gate spacers are formed that straddle each semiconductor fin. Portions of each semiconductor fin are left exposed. The exposed portions of the semiconductor fins are then merged by forming an epitaxial semiconductor material from an exposed semiconductor material portion that is not covered by the gate structure and gate spacers.


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