The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 25, 2014

Filed:

Aug. 06, 2010
Applicants:

Daesik Choi, Seoul, KR;

Young Jin Woo, Kyonggi-do, KR;

Taewoo Lee, Kyoungki-Do, KR;

Inventors:

DaeSik Choi, Seoul, KR;

Young Jin Woo, Kyonggi-do, KR;

TaeWoo Lee, Kyoungki-Do, KR;

Assignee:

STATS ChipPAC, Ltd., Singapore, SG;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/56 (2006.01); H01L 21/768 (2006.01); H01L 23/00 (2006.01); H01L 21/78 (2006.01); H01L 23/498 (2006.01); H01L 23/31 (2006.01); H01L 23/14 (2006.01); H01L 25/10 (2006.01);
U.S. Cl.
CPC ...
H01L 21/78 (2013.01); H01L 2224/04105 (2013.01); H01L 2224/73253 (2013.01); H01L 2924/01049 (2013.01); H01L 2224/24225 (2013.01); H01L 2224/24146 (2013.01); H01L 2924/01074 (2013.01); H01L 2225/06541 (2013.01); H01L 2225/06517 (2013.01); H01L 2224/32145 (2013.01); H01L 24/82 (2013.01); H01L 2225/1035 (2013.01); H01L 2224/32225 (2013.01); H01L 2924/01005 (2013.01); H01L 24/48 (2013.01); H01L 2924/01082 (2013.01); H01L 2224/97 (2013.01); H01L 21/568 (2013.01); H01L 23/49827 (2013.01); H01L 24/29 (2013.01); H01L 2924/01047 (2013.01); H01L 2224/73267 (2013.01); H01L 2924/01322 (2013.01); H01L 2224/16227 (2013.01); H01L 24/16 (2013.01); H01L 21/561 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/01013 (2013.01); H01L 2224/92244 (2013.01); H01L 2224/92 (2013.01); H01L 2225/1023 (2013.01); H01L 2225/1058 (2013.01); H01L 2924/078 (2013.01); H01L 2924/12041 (2013.01); H01L 2924/09701 (2013.01); H01L 2924/01006 (2013.01); H01L 24/97 (2013.01); H01L 2924/15311 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/014 (2013.01); H01L 2224/73265 (2013.01); H01L 23/3128 (2013.01); H01L 2924/01004 (2013.01); H01L 2224/16225 (2013.01); H01L 2924/01079 (2013.01); H01L 2224/48227 (2013.01); H01L 23/147 (2013.01); H01L 2924/01073 (2013.01); H01L 25/105 (2013.01); H01L 24/24 (2013.01); H01L 2924/01078 (2013.01); H01L 23/49811 (2013.01); H01L 2225/06572 (2013.01);
Abstract

A semiconductor device has a TSV wafer and semiconductor die mounted over the TSV wafer. A channel is formed through the TSV wafer. An encapsulant is deposited over the semiconductor die and TSV wafer. Conductive TMV are formed through the encapsulant over the conductive TSV and contact pads of the semiconductor die. The conductive TMV can be formed through the channel. A conductive layer is formed over the encapsulant and electrically connected to the conductive TMV. The conductive TMV are formed during the same manufacturing process. An insulating layer is formed over the encapsulant and conductive layer. A plurality of semiconductor die of the same size or different sizes can be stacked over the TSV wafer. The plurality of semiconductor die can be stacked over opposite sides of the TSV wafer. An internal stacking module can be stacked over the semiconductor die and electrically connected through the conductive TMV.


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