The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 2014
Filed:
Jun. 04, 2010
Applicants:
Xing Chen, Lexington, MA (US);
Chengxiang Ji, Waltham, MA (US);
Chiu-ying Tai, Chelmsford, MA (US);
Inventors:
Assignee:
MKS Instruments Inc., Andover, MA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C 28/00 (2006.01); C25D 11/04 (2006.01); C25D 11/16 (2006.01); C25D 11/02 (2006.01); H01J 37/32 (2006.01); H01J 37/16 (2006.01); C25D 5/48 (2006.01);
U.S. Cl.
CPC ...
C25D 11/04 (2013.01); C23C 28/321 (2013.01); C25D 11/16 (2013.01); C25D 11/026 (2013.01); H01J 37/32431 (2013.01); H01J 37/16 (2013.01); H01J 37/32467 (2013.01); H01J 37/32357 (2013.01); C25D 5/48 (2013.01);
Abstract
A method for creating an oxide layer having a reduced copper concentration over a surface of an object comprising aluminum and copper for use in a semiconductor processing system. The oxide layer produced using a plasma electrolytic oxidation process has a reduced copper peak concentration, which decreases a risk of copper contamination, and includes magnesium oxides that can be converted to magnesium halide upon exposure to an excited halogen-comprising gas or halogen-comprising plasma to increase the erosion/corrosion resistance of the oxide layer.