The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 11, 2014
Filed:
Apr. 15, 2011
Wolfgang Singer, Aalen, DE;
Yim-bun-patrick Kwan, Aalen, DE;
Stefan-wolfgang Schmidt, Aalen, DE;
Dirk Heinrich Ehm, Lauchheim, DE;
Dieter Kraus, Munich, DE;
Stefan Wiesner, Lauchheim, DE;
Stefan Koehler, Rainau, DE;
Almut Czap, Aalen, DE;
Hin Yiu Anthony Chung, Ulm, DE;
Wolfgang Singer, Aalen, DE;
Yim-Bun-Patrick Kwan, Aalen, DE;
Stefan-Wolfgang Schmidt, Aalen, DE;
Dirk Heinrich Ehm, Lauchheim, DE;
Dieter Kraus, Munich, DE;
Stefan Wiesner, Lauchheim, DE;
Stefan Koehler, Rainau, DE;
Almut Czap, Aalen, DE;
Hin Yiu Anthony Chung, Ulm, DE;
Carl Zeiss SMT GmbH, Oberkochen, DE;
Abstract
An EUV lithography device including an illumination device for illuminating a mask at an illumination position in the EUV lithography device and a projection device for imaging a structure provided on the mask onto a light-sensitive substrate. The EUV lithography device has a processing device () for processing an optical element (), in particular the mask, preferably in a locally resolved manner, at a processing position in the EUV lithography device. For activating at least one gas component of the gas stream (), the processing device () includes a particle generator () for generating a particle beam, in particular an electron beam (), and/or a high-frequency generator.