The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 11, 2014

Filed:

Apr. 01, 2013
Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventors:

Chu-Fu Lin, Kaohsiung, TW;

Chien-Li Kuo, Hsinchu, TW;

Ching-Li Yang, Ping-Tung Hsien, TW;

Assignee:

United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/52 (2006.01); H01L 23/525 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5252 (2013.01); H01L 24/11 (2013.01);
Abstract

A method of programming an anti-fuse includes steps as follows. First, an insulating layer is provided. An anti-fuse region is defined on the insulating layer. An anti-fuse is embedded within the anti-fuse region of the insulating layer. The anti-fuse includes at least a first conductor and a second conductor. Then, part of the insulating layer is removed by a laser to form an anti-fuse opening in the insulating layer. Part of the first conductor and part of the second conductor are exposed through the anti-fuse opening. After that, a under bump metallurgy layer is formed in the anti-fuse opening to connect the first conductor and the second conductor electrically.


Find Patent Forward Citations

Loading…