The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 11, 2014

Filed:

Jan. 09, 2013
Applicant:

Ulvac, Inc., Chigasaki, JP;

Inventors:

Youhei Endo, Susono, JP;

Shuji Kodaira, Susono, JP;

Yuta Sakamoto, Susono, JP;

Junichi Hamaguchi, Susono, JP;

Yohei Uchida, Susono, JP;

Yasushi Higuchi, Susono, JP;

Shinya Nakamura, Susono, JP;

Kazuyoshi Hashimoto, Susono, JP;

Yoshihiro Ikeda, Susono, JP;

Hiroaki Iwasawa, Susono, JP;

Assignee:

ULVAC, Inc., Chigasaki-Shi, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76882 (2013.01); H01L 21/76883 (2013.01);
Abstract

A manufacturing method of a device including: a first process in which a barrier film is formed on a substrate with a concave portion provided on one surface thereof so as to cover an inner wall surface of the concave portion; a second process in which a conductive film is formed so as to cover the barrier film; and a third process in which the conductive film is melted by a reflow method, wherein the method includes a process α between the second process and the third process, in which the substrate with the barrier film and the conductive film laminated thereon in this order is exposed to an atmosphere under a pressure A for a time period B, and wherein in the process α, control is carried out such that a product of the pressure A and the time period B is not greater than 6×10[Pa·s].


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