The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 11, 2014

Filed:

Apr. 30, 2011
Applicants:

Dongsam Park, Kyoungki-do, KR;

Yongduk Lee, Seoul, KR;

Inventors:

DongSam Park, Kyoungki-do, KR;

YongDuk Lee, Seoul, KR;

Assignee:

STATS ChipPAC, Ltd., Singapore, SG;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 23/00 (2006.01); H01L 23/498 (2006.01); H01L 21/48 (2006.01); H01L 21/56 (2006.01); H01L 25/16 (2006.01); H01L 23/538 (2006.01); H01L 23/48 (2006.01); H05K 1/18 (2006.01); H01L 23/29 (2006.01);
U.S. Cl.
CPC ...
H01L 23/49827 (2013.01); H01L 2224/94 (2013.01); H01L 2224/05639 (2013.01); H01L 2224/13144 (2013.01); H01L 2924/01322 (2013.01); H01L 24/06 (2013.01); H01L 2224/13155 (2013.01); H01L 2924/13091 (2013.01); H01L 24/20 (2013.01); H01L 24/19 (2013.01); H01L 2224/13139 (2013.01); H01L 2224/73265 (2013.01); H01L 2224/12105 (2013.01); H01L 23/481 (2013.01); H01L 2224/1132 (2013.01); H01L 2224/73204 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/11849 (2013.01); H01L 2224/32225 (2013.01); H01L 2924/12041 (2013.01); H01L 23/49822 (2013.01); H01L 2224/13124 (2013.01); H01L 24/48 (2013.01); H01L 2224/05611 (2013.01); H01L 23/49816 (2013.01); H01L 24/05 (2013.01); H01L 2224/16145 (2013.01); H01L 2224/06181 (2013.01); H01L 21/4846 (2013.01); H01L 2224/04105 (2013.01); H01L 2224/131 (2013.01); H01L 2224/05647 (2013.01); H01L 24/16 (2013.01); H01L 2224/13113 (2013.01); H01L 24/13 (2013.01); H01L 2224/13116 (2013.01); H01L 21/561 (2013.01); H01L 25/16 (2013.01); H05K 1/185 (2013.01); H01L 2224/05655 (2013.01); H01L 2224/0603 (2013.01); H01L 2224/05624 (2013.01); H01L 2224/1146 (2013.01); H01L 2221/6835 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/13025 (2013.01); H01L 2224/48227 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/05644 (2013.01); H01L 2224/11334 (2013.01); H01L 2224/13111 (2013.01); H01L 2924/15311 (2013.01); H01L 23/5389 (2013.01); H01L 2224/73259 (2013.01); H01L 23/295 (2013.01);
Abstract

A semiconductor device has a carrier or first conductive layer with a plurality of TSV semiconductor die mounted over the carrier or first conductive layer. An encapsulant is deposited around the first semiconductor die and over the carrier or first conductive layer to embed the first semiconductor die. A conductive TMV is formed through the encapsulant. A second conductive layer is formed over a first surface of the encapsulant. A first insulating layer is formed over the first surface of the encapsulant while exposing portions of the second conductive layer. A second insulating layer is formed over the second surface of the encapsulant while exposing portions of the first conductive layer. Alternatively, a first interconnect structure is formed over the first surface of the encapsulant. The carrier is removed and a second interconnect structure is formed over a second surface of the encapsulant.


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