The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 04, 2014

Filed:

Mar. 28, 2011
Applicants:

Jiro Yokoya, Kawasaki, JP;

Tsuyoshi Nakamura, Kawasaki, JP;

Masaru Takeshita, Kawasaki, JP;

Yasuhiro Yoshii, Kawasaki, JP;

Hirokuni Saito, Kawasaki, JP;

Inventors:

Jiro Yokoya, Kawasaki, JP;

Tsuyoshi Nakamura, Kawasaki, JP;

Masaru Takeshita, Kawasaki, JP;

Yasuhiro Yoshii, Kawasaki, JP;

Hirokuni Saito, Kawasaki, JP;

Assignee:

Tokyo Ohka Kogyo Co., Ltd., Kawasaki-shi, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/20 (2006.01); G03F 7/039 (2006.01); G03F 7/038 (2006.01); G03F 7/00 (2006.01); G03F 7/40 (2006.01); G03F 7/004 (2006.01);
U.S. Cl.
CPC ...
G03F 7/0035 (2013.01); G03F 7/0397 (2013.01); G03F 7/0382 (2013.01); G03F 7/0045 (2013.01); G03F 7/2041 (2013.01); G03F 7/40 (2013.01);
Abstract

There are provided a method of forming a resist pattern in which a resist pattern is formed on top of a substrate by using a chemically amplified resist composition and conducting patterning two or more times, the method being capable of reducing the extent of damage, caused by the second patterning, imposed upon the first resist pattern that is formed by the first patterning; as well as a resist composition that is useful for forming the first resist pattern in this method of forming a resist pattern. The method includes forming of a first resist pattern using a resist composition containing a thermal base generator as a chemically amplified resist composition during first patterning, and then conducting a hard bake for baking the first resist pattern under a bake condition such that a base is generated from the thermal base generator, prior to the second patterning.


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