The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 28, 2014
Filed:
Jan. 24, 2014
Applicant:
Intermolecular, Inc., San Jose, CA (US);
Inventors:
Michael Miller, San Jose, CA (US);
Tony P. Chiang, Campbell, CA (US);
Prashant B. Phatak, San Jose, CA (US);
Assignee:
Intermolecular, Inc., San Jose, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/01 (2006.01); G11C 13/00 (2006.01); H01L 45/00 (2006.01); H01L 21/265 (2006.01); H01L 21/322 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
H01L 45/122 (2013.01); G11C 13/0007 (2013.01); H01L 45/1616 (2013.01); H01L 45/1658 (2013.01); H01L 45/1641 (2013.01); G11C 2213/55 (2013.01); H01L 45/165 (2013.01); G11C 2213/56 (2013.01); H01L 45/12 (2013.01); H01L 45/10 (2013.01); H01L 21/265 (2013.01); H01L 21/322 (2013.01); H01L 45/1625 (2013.01); H01L 45/08 (2013.01); H01L 45/1675 (2013.01); H01L 27/2463 (2013.01); H01L 45/1233 (2013.01); H01L 45/146 (2013.01); G11C 2213/32 (2013.01); H01L 45/1246 (2013.01);
Abstract
Controlled localized defect paths for resistive memories are described, including a method for forming controlled localized defect paths including forming a first electrode forming a metal oxide layer on the first electrode, masking the metal oxide to create exposed regions and concealed regions of a surface of the metal oxide, and altering the exposed regions of the metal oxide to create localized defect paths beneath the exposed regions.