The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 2014
Filed:
Mar. 02, 2012
Applicants:
Yi-shien Mor, Hsin-Chu, TW;
Hsiao-chu Chen, Caotun Township, TW;
Mu-chi Chiang, Hsin-Chu, TW;
Inventors:
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract
System and method for forming lightly doped drain (LDD) extensions. An embodiment comprises forming a gate electrode on a semiconductor fin and forming a dielectric layer over the gate electrode. The gate electrode is then etched to expose a portion of the semiconductor fin. The exposed portions of the fin comprise the LDD extensions.
Mor, Yi-Shien. (2014). Finfet design with ldd extensions (U.S. Patent No. 8865560). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8865560
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile