The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 2014
Filed:
Dec. 26, 2012
Applicant:
Intermolecular, Inc., San Jose, CA (US);
Inventors:
Monica Mathur, San Jose, CA (US);
Michael Miller, San Jose, CA (US);
Prashant B. Phatak, San Jose, CA (US);
Assignee:
Intermolecular, Inc., San Jose, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/66 (2006.01);
U.S. Cl.
CPC ...
H01L 22/14 (2013.01);
Abstract
Methods of forming layers can comprise defining a plurality of discrete site-isolated regions (SIRs) on a substrate, forming a first layer on one of the discrete SIRs, forming a second layer on the first layer, measuring a lattice parameter or an electrical property of the second layer, The process parameters for the formation of the first layer are varied in a combinatorial manner between different discrete SIRs to explore the possible layers that can result in suitable lattice matching for second layer of a desired crystalline structure.