The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 07, 2014

Filed:

Aug. 25, 2010
Applicants:

Emmanuel Augendre, Montbonnot, FR;

Maud Vinet, Rives, FR;

Laurent Clavelier, Grenoble, FR;

Perrine Batude, Dijon, FR;

Inventors:

Emmanuel Augendre, Montbonnot, FR;

Maud Vinet, Rives, FR;

Laurent Clavelier, Grenoble, FR;

Perrine Batude, Dijon, FR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/088 (2006.01);
U.S. Cl.
CPC ...
Abstract

An integrated circuit including at least: a first MOS transistor; a second MOS transistor, arranged on the first MOS transistor, the second MOS transistor including a channel region in at least one semiconductor layer including two approximately parallel primary faces; a portion of at least one electrically conductive material electrically connected to a gate of the first transistor and arranged between the gate of the first transistor and the channel region of the second transistor; a dielectric layer arranged at least between the portion of the electrically conductive material and the channel region of the second transistor; and a section of the channel region of the second transistor in a plane parallel to the two primary faces of the semiconductor layer is included in a section of the portion of the electrically conductive material projected in said plane.


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