The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 07, 2014

Filed:

Oct. 02, 2012
Applicants:

Yan Guan, Cupertino, CA (US);

Abhishek Manohar, San Jose, CA (US);

Deqi Wang, San Jose, CA (US);

Feng Chen, Milpitas, CA (US);

Raashina Humayun, Los Altos, CA (US);

Inventors:

Yan Guan, Cupertino, CA (US);

Abhishek Manohar, San Jose, CA (US);

Deqi Wang, San Jose, CA (US);

Feng Chen, Milpitas, CA (US);

Raashina Humayun, Los Altos, CA (US);

Assignee:

Novellus Systems, Inc., Fremont, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01);
U.S. Cl.
CPC ...
Abstract

Methods of producing low resistivity tungsten bulk layers having low roughness and associated apparatus are provided. According to various embodiments, the methods involve CVD deposition of tungsten at high pressures and/or high temperatures. In some embodiments, the CVD deposition occurs in the presence of alternating nitrogen gas pulses, such that alternating portions of the film are deposited by CVD in the absence of nitrogen and in the presence of nitrogen.


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