The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 30, 2014

Filed:

Jan. 24, 2013
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Michel J. Abou-Khalil, Essex Junction, VT (US);

Robert J. Gauthier, Jr., Hinesburg, VT (US);

Tom C. Lee, Essex Junction, VT (US);

Junjun Li, Willston, VT (US);

Souvick Mitra, Essex Junction, VT (US);

Christopher S. Putnam, Hinesburg, VT (US);

Anthony K. Stamper, Williston, VT (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 29/94 (2006.01); H01L 23/522 (2006.01); H01L 49/02 (2006.01); H01L 27/02 (2006.01);
U.S. Cl.
CPC ...
H01L 28/82 (2013.01); H01L 23/5223 (2013.01); H01L 27/0207 (2013.01); H01L 28/90 (2013.01);
Abstract

Metal-insulator-metal (MIM) capacitors and methods for fabricating MIM capacitors. The MIM capacitor includes an interlayer dielectric (ILD) layer with apertures each bounded by a plurality of sidewalls and each extending from the top surface of the ILD layer into the first interlayer dielectric layer. A layer stack, which is disposed on the sidewalls of the apertures and the top surface of the ILD layer, includes a bottom conductive electrode, a top conductive electrode, and a capacitor dielectric between the bottom and top conductive electrodes.


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