The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 30, 2014

Filed:

Feb. 21, 2013
Applicants:

Ravi Pillarisetty, Portland, OR (US);

Mantu Hudait, Portland, OR (US);

Marko Radosavljevic, Beaverton, OR (US);

Gilbert Dewey, Hillsboro, OR (US);

Jack T. Kavalieros, Portland, OR (US);

Inventors:

Ravi Pillarisetty, Portland, OR (US);

Mantu Hudait, Portland, OR (US);

Marko Radosavljevic, Beaverton, OR (US);

Gilbert Dewey, Hillsboro, OR (US);

Jack T. Kavalieros, Portland, OR (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/10 (2006.01); H01L 29/205 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1054 (2013.01); H01L 29/66522 (2013.01); H01L 29/205 (2013.01); H01L 29/66477 (2013.01);
Abstract

A surface channel transistor is provided in a semiconductive device. The surface channel transistor is either a PMOS or an NMOS device. Epitaxial layers are disposed above the surface channel transistor to cause an increased bandgap phenomenon nearer the surface of the device. A process of forming the surface channel transistor includes grading the epitaxial layers.


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