The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 23, 2014
Filed:
May. 17, 2011
Hsin-fu Huang, Tainan, TW;
Kun-hsien Lin, Miaoli County, TW;
Chi-mao Hsu, Tainan County, TW;
Min-chuan Tsai, Taipei County, TW;
Tzung-ying Lee, Pingtung County, TW;
Chin-fu Lin, Tainan, TW;
Hsin-Fu Huang, Tainan, TW;
Kun-Hsien Lin, Miaoli County, TW;
Chi-Mao Hsu, Tainan County, TW;
Min-Chuan Tsai, Taipei County, TW;
Tzung-Ying Lee, Pingtung County, TW;
Chin-Fu Lin, Tainan, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A method of fabricating a semiconductor device includes following steps. A substrate is provided, wherein a first dielectric layer having a trench therein is formed on the substrate, a source/drain region is formed in the substrate at two sides of the trench, and a second dielectric layer is formed on the substrate in the trench. A first physical vapor deposition process is performed to form a Ti-containing metal layer in the trench. A second physical vapor deposition process is performed to form an Al layer on the Ti-containing metal layer in the trench. A thermal process is performed to anneal the Ti-containing metal layer and the Al layer so as to form a work function metal layer. A metal layer is formed to fill the trench.