The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 16, 2014
Filed:
Feb. 17, 2011
Hideo Ohno, Sendai, JP;
Shoji Ikeda, Sendai, JP;
Katsuya Miura, Higashimurayama, JP;
Kazuo Ono, Hachioji, JP;
Riichiro Takemura, Tokyo, JP;
Hiromasa Takahashi, Hachioji, JP;
Hideo Ohno, Sendai, JP;
Shoji Ikeda, Sendai, JP;
Katsuya Miura, Higashimurayama, JP;
Kazuo Ono, Hachioji, JP;
Riichiro Takemura, Tokyo, JP;
Hiromasa Takahashi, Hachioji, JP;
Hitachi, Ltd., Tokyo, JP;
Tohoku University, Sendai-shi, Miyagi, JP;
Abstract
A relation between a drive current of a selection transistor of a magnetic memory and a threshold magnetization switching current of the magnetoresistance effect element is optimized. In order to optimize the relation between the drive current of the selection transistor and the threshold magnetization switching current of the magnetoresistance effect elementof the magnetic memory cell, a mechanism-for dropping the threshold magnetization switching current on '1' writing is provided that applies a magnetic field that is in the inverse direction of the pinned layer to the recording layer of the magnetoresistance effect element.