The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 09, 2014
Filed:
Dec. 22, 2011
Donald R. Disney, Cupertino, CA (US);
Isik C. Kizilyalli, San Francisco, CA (US);
Hui Nie, Cupertino, CA (US);
Linda Romano, Sunnyvale, CA (US);
Richard J. Brown, Los Gatos, CA (US);
Madhan Raj, Cupertino, CA (US);
Donald R. Disney, Cupertino, CA (US);
Isik C. Kizilyalli, San Francisco, CA (US);
Hui Nie, Cupertino, CA (US);
Linda Romano, Sunnyvale, CA (US);
Richard J. Brown, Los Gatos, CA (US);
Madhan Raj, Cupertino, CA (US);
Avogy, Inc., San Jose, CA (US);
Abstract
A semiconductor device includes a III-nitride substrate, a first III-nitride epitaxial layer coupled to the III-nitride substrate and having a mesa, and a second III-nitride epitaxial layer coupled to a top surface of the mesa. The semiconductor device further includes a III-nitride gate structure coupled to a side surface of the mesa, and a spacer configured to provide electrical insulation between the second III-nitride epitaxial layer and the III-nitride gate structure.