The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 09, 2014
Filed:
Aug. 26, 2011
Duan Quan Liao, Singapore, SG;
Yikun Chen, Singapore, SG;
Xiao Zhong Zhu, Singapore, SG;
Ching-hwa Tey, Singapore, SG;
Chen-hua Tsai, Hsinchu County, TW;
Yu-tsung Lai, Taichung, TW;
Duan Quan Liao, Singapore, SG;
Yikun Chen, Singapore, SG;
Xiao Zhong Zhu, Singapore, SG;
Ching-Hwa Tey, Singapore, SG;
Chen-Hua Tsai, Hsinchu County, TW;
Yu-Tsung Lai, Taichung, TW;
United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
A manufacturing method for a dual damascene structure first includes providing a substrate having at least a dielectric layer, a first hard mask layer, a first cap layer, a second hard mask layer, and a second cap layer sequentially formed thereon, performing a first double patterning process to form a plurality of first trench openings and second trench openings in the second cap layer and the second hard mask, and the first layer being exposed in bottoms of the first trench openings and the second trench openings, performing a second double patterning process to form a plurality of first via openings and second via openings in the first cap layer and the first hard mask layer, and transferring the first trench openings, the second trench openings, the first via openings, and the second via openings to the dielectric layer to form a plurality of dual damascene openings.