The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 2014
Filed:
Mar. 01, 2011
Masahiro Kato, Annaka, JP;
Satoshi Oka, Annaka, JP;
Norihiro Kobayashi, Annaka, JP;
Tohru Ishizuka, Annaka, JP;
Nobuhiko Noto, Annaka, JP;
Masahiro Kato, Annaka, JP;
Satoshi Oka, Annaka, JP;
Norihiro Kobayashi, Annaka, JP;
Tohru Ishizuka, Annaka, JP;
Nobuhiko Noto, Annaka, JP;
Shin-Etsu Handotai Co., Ltd., Tokyo, JP;
Abstract
A silicon epitaxial wafer having a silicon epitaxial layer grown by vapor phase epitaxy on a main surface of a silicon single crystal substrate, wherein the main surface of the silicon single crystal substrate is tilted with respect to a [100] axis at an angle θ in a [011] direction or a [0-1-1] direction from a (100) plane and at an angle φ in a [01-1] direction or a [0-11] direction from the (100) plane, the angle θ and the angle φ are less than ten minutes, and a dopant concentration of the silicon epitaxial layer is equal to or more than 1×10/cm. Even when an epitaxial layer having a dopant concentration of 1×10/cmor more is formed on the main surface of the silicon single crystal substrate, stripe-shaped surface irregularities on the epitaxial layer are inhibited.