The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 2014
Filed:
Feb. 02, 2010
Applicants:
Hajime Sakamoto, Ibi-gun, JP;
Dongdong Wang, Ibi-gun, JP;
Inventors:
Hajime Sakamoto, Ibi-gun, JP;
Dongdong Wang, Ibi-gun, JP;
Assignee:
Ibiden Co., Ltd., Ogaki-shi, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of manufacturing a semiconductor device having a transition layer, including (a) forming a wiring and a die pad on a wafer, (b) forming a thin film layer on an entire surface of the wafer obtained in the step (a), (c) forming a resist layer on the thin film layer, and forming a thickening layer on a resist layer unformed section, (d) peeling the resist layer, (e) removing the thin film layer by etching, and (f) dividing the wafer to thereby form semiconductor devices.