The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 2014
Filed:
Jun. 29, 2009
Akinori Koukitu, Fuchu, JP;
Yoshinao Kumagai, Fuchu, JP;
Tetsuo Fujii, Kyoto, JP;
Naoki Yoshii, Nirasaki, JP;
Akinori Koukitu, Fuchu, JP;
Yoshinao Kumagai, Fuchu, JP;
Tetsuo Fujii, Kyoto, JP;
Naoki Yoshii, Nirasaki, JP;
National University Corporation Tokyo University of Agriculture and Technology, Tokyo, JP;
Rohm Co., Ltd., Kyoto, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
It is provided a hetero epitaxial growth method, a hetero epitaxial crystal structure, a hetero epitaxial growth apparatus and a semiconductor device, the method includes forming a buffer layer formed with the orienting film of an oxide, or the orienting film of nitride on a heterogeneous substrate; and performing crystal growth of a zinc oxide based semiconductor layer on the buffer layer using a halogenated group II metal and an oxygen material. It is provided a homo epitaxial growth method, a homo epitaxial crystal structure, a homo epitaxial growth apparatus and a semiconductor device, the homo epitaxial growth method includes introducing reactant gas mixing zinc containing gas and oxygen containing gas on a zinc oxide substrate; and performing crystal growth of a zinc oxide based semiconductor layer on the zinc oxide substrate.