The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 26, 2014
Filed:
Jul. 10, 2012
Chia-chang Hsu, Kaohsiung, TW;
Bor-shyang Liao, Kaohsiung, TW;
Kuo-chih Lai, Tainan, TW;
Nien-ting Ho, Tainan, TW;
Chi-mao Hsu, Tainan, TW;
Shu-min Huang, Tainan, TW;
Min-chung Cheng, Chiayi County, TW;
Chia-Chang Hsu, Kaohsiung, TW;
Bor-Shyang Liao, Kaohsiung, TW;
Kuo-Chih Lai, Tainan, TW;
Nien-Ting Ho, Tainan, TW;
Chi-Mao Hsu, Tainan, TW;
Shu-Min Huang, Tainan, TW;
Min-Chung Cheng, Chiayi County, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A salicide process is described. A substrate having thereon an insulating layer and a silicon-based region is provided. A nickel-containing metal layer is formed on the substrate. A first anneal process is performed to form a nickel-rich silicide layer on the silicon-based region. The remaining nickel-containing metal layer is stripped. A thermal recovery process is performed at a temperature of 150-250° C. for a period longer than 5 minutes. A second anneal process is performed to change the phase of the nickel-rich silicide layer and form a low-resistivity mononickel silicide layer.